Influence on tunnel magnetoresistance of spin configurations localized within insulators
نویسندگان
چکیده
We theoretically study effects on tunnel magnetoresistance ~TMR! of spin configurations localized within insulating barriers. Two cases are treated herein: interaction between a tunneling electron and an isolated classical spin being canted at an angle to the magnetization axis of the ferromagnetic leads, and interaction between a tunneling electron and many quantum spins within the insulating barrier. The characteristic features of TMR observed in d-doped ferromagnetic tunnel junctions and in grain boundaries of metallic manganites are discussed in view of the results obtained. DOI: 10.1103/PhysRevB.65.104433 PACS number~s!: 75.70.Pa, 73.40.Gk
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تاریخ انتشار 2002